Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yong Yang0
Joung Joo Lee0
Seshadri Ganguli0
Feihu Wang0
Srinivas Gandikota0
Annamalai Lakshmanan0
Yixiong Yang0
Jacqueline S. Wrench0
Date of Patent
June 25, 2024
0Patent Application Number
181492260
Date Filed
January 3, 2023
0Patent Citations
Patent Primary Examiner
CPC Code
Patent abstract
Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
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