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US Patent 12027427 Preheat processes for millisecond anneal system

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 23, 2020
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Date of Patent
July 2, 2024
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Patent Application Number
16936468
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Patent Citations
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US Patent 7442415 Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films
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US Patent 7790633 Sequential deposition/anneal film densification method
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US Patent 8323754 Stabilization of high-k dielectric materials
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US Patent 8809175 Methods of anneal after deposition of gate layers
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US Patent 9386632 Apparatus for substrate treatment and method for operating the same
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US Patent 9093468 Asymmetric cyclic depositon and etch process for epitaxial formation mechanisms of source and drain regions
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US Patent 9482468 Repeatable heat-treating methods and apparatus
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US Patent 7127367 Tailored temperature uniformity
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US Patent 7371998 Thermal wafer processor
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Patent Inventor Names
Markus Lieberer
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Markus Hagedorn
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Christian Pfahler
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Michael vanAbbema
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Alexandr Cosceev
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12027427
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Patent Primary Examiner
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Timor Karimy
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CPC Code
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H01L 22/20
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H01L 22/12
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H01L 22/26
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H01L 21/67276
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H01L 21/00
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H01L 21/68757
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H01L 21/67248
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H01L 21/67115
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H01L 21/324
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