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US Patent 12029145 Memory device
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Patent
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Date Filed
March 15, 2021
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Date of Patent
July 2, 2024
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Patent Application Number
17201356
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Patent Citations
US Patent 8993374 Phase change material gradient structures and methods
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US Patent 10026895 Superlattice memory and crosspoint memory device
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US Patent 10153429 Memory device
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US Patent 10559750 Nonvolatile memory device and method of manufacturing the same
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US Patent 10177309 Memory device
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US Patent 11037984 Electronic device and method for fabricating the same
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US Patent 8617972 Low temperature GST process
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US Patent 8878153 Variable resistance element having gradient of diffusion coefficient of ion conducting layer
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Patent Inventor Names
Kazuhiko Yamamoto
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Yoshiki Kamata
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Bairu Yan
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
12029145
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Patent Primary Examiner
Mounir S Amer
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