Patent attributes
A semiconductor device includes first and second active areas, a first gate, a first conductive segment, a first via and a first continuous gate. The first and second active areas extend in a first direction. The first gate crosses over the first active area and the second active area. The first gate includes a first gate portion and a second gate portion electrically isolated from each other. The first conductive segment crosses over the first active area and the second active area. The first via is arranged above the first conductive segment. The first active area and the second active area are coupled through the first conductive segment to the first via. The first continuous gate is disposed between the first conductive segment and the first gate, and crossing over the first active area and the second active area.
