US Patent 12065731 Tungsten deposition on a cobalt surface
Patent 12065731 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2024 by the United States Patent and Trademark Office.
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US Patent 12065731 Tungsten deposition on a cobalt surface
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Patent abstract
In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chi-Cheng Hung0
Pei-Shan Chang0
Pei-Wen Wu0
Yu-Sheng Wang0
Date of Patent
August 20, 2024
0Patent Application Number
172483580
Date Filed
January 21, 2021
0Patent Citations
Patent Primary Examiner
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