Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Pin-Ren Dai0
Hui-Hsien Wei0
Han-Ting Tsai0
Wei-Chih Wen0
Tai-Yen Peng0
Chien-Min Lee0
Chung-Te Lin0
Sheng-Chih Lai0
Date of Patent
August 20, 2024
0Patent Application Number
183123720
Date Filed
May 4, 2023
0Patent Citations
Patent Primary Examiner
Patent abstract
A device includes a resistance switching layer, a capping layer, a top electrode, a first spacer, and a second spacer. The resistance switching layer is over a substrate. The capping layer is over the resistance switching layer. The top electrode is over the capping layer. The first spacer lines the resistance switching layer and the capping layer. The second spacer lines the first spacer. The capping layer is in contact with the top electrode, the first spacer, and the second spacer.
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