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US Patent 12069958 Semiconductor device
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Patent
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Date Filed
May 4, 2023
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Date of Patent
August 20, 2024
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Patent Application Number
18312372
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Patent Citations
US Patent 9893278 Embedded memory device between noncontigous interconnect metal layers
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US Patent 9859335 Semiconductor device having memory cell structure
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US Patent 9954166 Embedded memory device with a composite top electrode
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US Patent 9142762 Magnetic tunnel junction and method for fabricating a magnetic tunnel junction
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US Patent 9502466 Dummy bottom electrode in interconnect to reduce CMP dishing
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Patent Inventor Names
Pin-Ren Dai
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Hui-Hsien Wei
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Han-Ting Tsai
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Wei-Chih Wen
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Tai-Yen Peng
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Chien-Min Lee
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Chung-Te Lin
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Sheng-Chih Lai
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
12069958
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Patent Primary Examiner
Mouloucoulaye Inoussa
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CPC Code
H01L 45/04
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H01L 43/10
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H01L 45/1608
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H01L 27/222
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H01L 27/24
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H01L 27/2436
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H01L 45/1253
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H01L 45/16
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H01L 23/528
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H01L 21/76802
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