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US Patent 12074165 Gate cut with integrated etch stop layer

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
August 7, 2023
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Date of Patent
August 27, 2024
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Patent Application Number
18231187
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Patent Citations
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US Patent 8735235 Integrated circuit metal gate structure and method of fabrication
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US Patent 7723189 Method for manufacturing semiconductor device having recess gate
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US Patent 8569152 Cut-very-last dual-epi flow
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US Patent 8617996 Fin removal method
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US Patent 8637359 Fin-last replacement metal gate FinFET process
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US Patent 8946793 Integrated circuits having replacement gate structures and methods for fabricating the same
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US Patent 9064932 Methods of forming gate structures by a gate-cut-last process and the resulting structures
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US Patent 9070585 Electronic device including a trench and a conductive structure therein and a process of forming the same
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US Patent 9184101 Method for removing semiconductor fins using alternating masks
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US Patent 9209178 finFET isolation by selective cyclic etch
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•••
Patent Inventor Names
Rajasekhar Venigalla
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Andrew M. Greene
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Marc A. Bergendahl
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12074165
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Patent Primary Examiner
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Marc Anthony Armand
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CPC Code
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H01L 21/31144
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H01L 21/32133
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H01L 21/76802
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H01L 21/76877
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H01L 21/823431
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H01L 27/0886
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H01L 21/823821
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H01L 23/5286
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H01L 23/5329
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H01L 23/62
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•••

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