US Patent 12074218 Contact structure with insulating cap

A semiconductor device structure is provided. The semiconductor device structure includes a conductive gate stack formed over a substrate. A gate dielectric layer covers opposite sidewalls and a bottom of the conductive gate stack. A first gate spacer layer and a second gate spacer layer respectively cover portions of the gate dielectric layer corresponding to the opposite sidewalls of the conductive gate stack. A source/drain contact structure is separated from the conductive gate stack by the gate dielectric layer and the first gate spacer layer. A first insulating capping feature covers the conductive gate stack and is separated from the second gate spacer layer by the gate dielectric layer, and a second insulating capping feature covers the source/drain contact structure. An upper surface of the second insulating capping feature is substantially level with an upper surface of the first insulating capping feature.