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US Patent 12075631 Magnetic random access memory and manufacturing method thereof

Patent 12075631 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2024 by the United States Patent and Trademark Office.

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Patent abstract

A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

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