US Patent 12075631 Magnetic random access memory and manufacturing method thereof
Patent 12075631 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2024 by the United States Patent and Trademark Office.
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US Patent 12075631 Magnetic random access memory and manufacturing method thereof
Article
Patent abstract
A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Duen-Huei Hou0
Ji-Feng Ying0
Date of Patent
August 27, 2024
0Patent Application Number
181386250
Date Filed
April 24, 2023
0Patent Citations
Patent Primary Examiner
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