US Patent 12080547 Interconnect system with improved low-K dielectrics
Patent 12080547 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2024 by the United States Patent and Trademark Office.
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US Patent 12080547 Interconnect system with improved low-K dielectrics
Article
Patent abstract
Methods to form low-k dielectric materials for use as intermetal dielectrics in multilevel interconnect systems, along with their chemical and physical properties, are provided. The deposition techniques described include PECVD, PEALD, and ALD processes where the precursors such as TEOS and MDEOS may provide the requisite O-atoms and O
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Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Joung-Wei Liou0
Yi-Wei Chiu0
Yu Lun Ke0
Date of Patent
September 3, 2024
0Patent Application Number
173507920
Date Filed
June 17, 2021
0Patent Citations
Patent Primary Examiner
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