Patent attributes
A semiconductor structure and a forming method thereof are provided, and the forming method includes: providing a base; forming, on the base, a plurality of conductive function layers extending in a first direction and sequentially arranged in a second direction, a bottom dielectric layer located on the base between the conductive function layers, and a blocking structure located in the conductive function layer, the blocking structure segmenting the conductive function layers located on two sides of the blocking structure in the first direction; forming a top dielectric layer covering the bottom dielectric layer, the conductive function layers, and the blocking structure; etching the top dielectric layer located above a junction of the blocking structure and the conductive function layer and a part of the blocking structure located at a side wall of the conductive function layer, to form a via running through the top dielectric layer and exposing a part of a top and a part of a side wall of the conductive function layer; and filling the via with a via interconnection structure, the via interconnection structure being in contact with the part of the top and the part of the side wall of the conductive function layer. Therefore, embodiments of the present disclosure are helpful to improve the performance of the semiconductor structure.
