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US Patent 12087871 Microstructure enhanced absorption photosensitive devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
October 30, 2023
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Date of Patent
September 10, 2024
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Patent Application Number
18385213
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Patent Citations
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US Patent 8129710 Plasmon enhanced nanowire light emitting diode
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US Patent 6879014 Semitransparent optical detector including a polycrystalline layer and method of making
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US Patent 7396696 Method for manufacturing super bright light emitting diode of nanorod array having InGaN quantum well
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US Patent 7525170 Pillar P-i-n semiconductor diodes
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US Patent 8022390 Lateral conduction infrared photodetector
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US Patent 8207064 3D polysilicon diode with low contact resistance and method for forming same
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US Patent 8357960 Multispectral imaging device and manufacturing thereof
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US Patent 8558336 Semiconductor photodetector structure and the fabrication method thereof
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US Patent 8680591 Photosensitive imaging devices and associated methods
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US Patent 8946675 Light emitting diode and method for manufacturing the same
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•••
Patent Inventor Names
Shih-Yuan Wang
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Shih-Ping Wang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12087871
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Patent Primary Examiner
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Eduardo A Rodela
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CPC Code
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H01L 31/02363
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H01L 31/028
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H01L 31/035281
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H01L 31/105
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H01L 31/02019
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H01L 27/1446
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H01L 27/146
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H01L 27/14607
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H01L 27/14625
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H01L 27/14643
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•••

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