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US Patent 12094927 Source/drain isolation structures for leakage prevention
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Patent
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Date Filed
July 29, 2022
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Date of Patent
September 17, 2024
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Patent Application Number
17815999
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Patent Citations
US Patent 10403550 Method of manufacturing a semiconductor device and a semiconductor device
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US Patent 10468532 Nanosheet substrate isolation scheme by lattice matched wide bandgap semiconductor
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US Patent 11038043 Semiconductor device and manufacturing method thereof
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US Patent 10811415 Semiconductor device and method for making the same
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US Patent 11855090 High performance MOSFETs having varying channel structures
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US Patent 9881998 Stacked nanosheet field effect transistor device with substrate isolation
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US Patent 10367061 Replacement metal gate and inner spacer formation in three dimensional structures using sacrificial silicon germanium
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Patent Inventor Names
Yen-Yu Chen
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Chung-Liang Cheng
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
12094927
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Patent Primary Examiner
Cuong B Nguyen
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CPC Code
H01L 29/66795
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H01L 29/785
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H01L 2029/7858
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H01L 21/02164
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H01L 21/02236
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H01L 29/42376
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H01L 29/0673
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H01L 29/42392
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H01L 29/66439
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H01L 29/66545
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