Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Alain F. Loiseau0
Meng Miao0
Robert J. Gauthier, Jr.0
Souvick Mitra0
You Li0
Wei Liang0
Date of Patent
October 1, 2024
0Patent Application Number
184627790
Date Filed
September 7, 2023
0Patent Citations
Patent Primary Examiner
Patent abstract
The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.
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