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US Patent 7973386 ESD protection bipolar device with internal avalanche diode

Patent 7973386 was granted and assigned to National Semiconductor on July, 2011 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

National Semiconductor

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

79733860

Patent Inventor Names

Peter J. Hopper0

Vladimir Kuznetsov0

Vladislav Vashchenko0

Date of Patent

July 5, 2011

Patent Application Number

116529820

Date Filed

January 12, 2007

Patent Citations Received

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US Patent 11804481 Fin-based and bipolar electrostatic discharge devices

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US Patent 12107083 Fin-based and bipolar electrostatic discharge devices

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US Patent 12068308 Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor well

Patent Primary Examiner

Thao X Le

Patent abstract

In a bipolar device an intrinsic Zener like diode is formed for controlling the triggering voltage and leakage current, the Zener-like diode being formed between the n-collector and the p-base, wherein the collector implant and base diffusion overlap at least partially.

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