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US Patent 12107113 Variable composition ternary compound semiconductor alloys, structures, and devices

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Michael R. Krames0

Date of Patent

October 1, 2024

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Patent Application Number

184012900

Date Filed

December 29, 2023

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Patent Citations

US Patent 9318326 Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication

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US Patent 10847625 Indium-gallium-nitride structures and devices

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US Patent 7351347 Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate

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US Patent 7663148 III-nitride light emitting device with reduced strain light emitting layer

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US Patent 7670933 Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

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US Patent 7955983 Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)

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US Patent 8729559 Method of making bulk InGaN substrates and devices thereon

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US Patent 9076927 (In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers

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Patent Primary Examiner

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