Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 2, 2010
Patent Application Number
11866748
Date Filed
October 3, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
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