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US Patent 12107149 Air spacer and method of forming same

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
April 18, 2023
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Date of Patent
October 1, 2024
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Patent Application Number
18302474
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Patent Citations
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US Patent 10355100 Field effect transistors having different stress control liners and method of making the same
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US Patent 11024550 Semiconductor device and method
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US Patent 10395988 Vertical FET transistor with reduced source/drain contact resistance
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US Patent 11121236 Semiconductor device with air spacer and stress liner
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US Patent 9984936 Methods of forming an isolated nano-sheet transistor device and the resulting device
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US Patent 10026824 Air-gap gate sidewall spacer and method
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Patent Inventor Names
Chen-Huang Huang
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Cheng-Chung Chang
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Ming-Jhe Sie
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An Chyi Wei
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Shiang-Bau Wang
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Szu-Ping Lee
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Chia-Jen Chen
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Shao-Hua Hsu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12107149
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Patent Primary Examiner
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Karen Kusumakar
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CPC Code
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H01L 29/66795
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H01L 29/785
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H01L 21/823431
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H01L 21/823468
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H01L 21/823481
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H01L 27/0886
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H01L 29/4966
0
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H01L 29/4991
0
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H01L 29/6656
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H01L 29/66553
0
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