US Patent 12112782 Compact MRAM architecture with magnetic bottom electrode

An approach for minimizing stack height and reducing resistance of an MRAM (Magnetoresistive random-access memory) is disclosed. The approach leverages an MRAM device with a T shape magnetic bottom electrode. The T shape magnetic bottom electrode can be made from a lower resistance metal such as cobalt. Furthermore, the method of creating the MRAM can include, depositing a low-k dielectric layer, forming bottom electrode via within the low-k dielectric layer, depositing bottom electrode metal liner on the bottom electrode via, depositing bottom electrode magnetic metal on the bottom electrode metal liner, planarizing the bottom electrode magnetic metal, depositing coupling layer and an MRAM stack on the bottom electrode magnetic metal, patterning and etching anisotropically the MRAM stack and depositing in-situ conformal dielectric layer and forming a top contact via on the MRAM stack.