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US Patent 12112980 Method to create air gaps

Patent 12112980 was granted and assigned to Lam Research on October, 2024 by the United States Patent and Trademark Office.

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Current Assignee

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Seshasayee Varadarajan0

Bart J. van Schravendijk0

Patrick A. van Cleemput0

Date of Patent

October 8, 2024

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Patent Application Number

173046970

Date Filed

June 24, 2021

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Patent Primary Examiner

Karen Kusumakar

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CPC Code

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Patent abstract

Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO

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