US Patent 12119264 Non-step nanosheet structure for stacked field-effect transistors
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US Patent 12119264 Non-step nanosheet structure for stacked field-effect transistors
Article
Patent abstract
Embodiments herein include semiconductor structures that may include a first field-effect transistor (FET) stacked above a second FET in a non-step nanosheet structure, and a bottom contact electrically connected to a first bottom source/drain (S/D) of the second FET through a portion of a first top S/D of the first FET.
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Gen Tsutsui0
Shogo Mochizuki0
Date of Patent
October 15, 2024
0Patent Application Number
178095950
Date Filed
June 29, 2022
0Patent Citations
Patent Primary Examiner
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