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US Patent 12125510 Magnetoresistance memory device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
July 30, 2021
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Date of Patent
October 22, 2024
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Patent Application Number
17389399
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Patent Citations
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US Patent 9461240 Magnetoresistive memory device
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US Patent 10211256 Magnetic memory device with stack structure including first and second magnetic layers and nonmagnetic layer between the first and second magnetic layers
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US Patent 10388343 Magnetoresistive element and magnetic memory
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US Patent 10840434 Storage device
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US Patent 10468170 Magnetic device
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US Patent 10873021 Magnetic device and manufacturing method of magnetic device
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US Patent 8705269 Magnetoresistive element and magnetic memory
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US Patent 8897060 Magnetoresistance effect element and magnetic memory
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Patent Inventor Names
Eiji Kitagawa
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Jung Hyeok Kwak
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Jin Won Jung
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Young Min Eeh
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Taiga Isoda
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Kazuya Sawada
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Tadaaki Oikawa
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12125510
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Patent Primary Examiner
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Cuong B Nguyen
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CPC Code
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G01R 33/098
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G11B 5/3909
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H01L 2924/1441
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H01L 29/516
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H01L 29/6684
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H01L 29/78391
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G11C 13/003
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G11C 11/1675
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G11C 11/1659
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G11C 14/0072
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