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US Patent 12125886 Fin field-effect transistor device and method
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Patent
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Date Filed
May 14, 2021
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Date of Patent
October 22, 2024
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Patent Application Number
17320971
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Patent Citations
US Patent 9859386 Self aligned contact scheme
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US Patent 10431495 Semiconductor device with local connection
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9443769 Wrap-around contact
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548366 Self aligned contact scheme
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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•••
Patent Inventor Names
Ming-Huan Tsai
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
12125886
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Patent Primary Examiner
Vu A Vu
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CPC Code
H01L 29/41791
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H01L 29/66795
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H01L 29/7851
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H01L 29/401
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H01L 21/823475
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H01L 21/823871
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H01L 27/0886
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H01L 21/823431
0
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