Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Carl Radens0
Junli Wang0
Kangguo Cheng0
Lawrence A. Clevenger0
John H. Zhang0
Date of Patent
October 1, 2019
Patent Application Number
16042561
Date Filed
July 23, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
A technique relates to a semiconductor device. A first trench silicide (TS) is coupled to a first source or drain (S/D). A second TS is coupled to a second S/D, and a gate metal is separated from the first and second TS. A trench is formed above and on sides of the gate metal. A local connection metal is formed in the trench such that the gate metal is coupled to the first TS and the second TS. A local connection cap is formed on top of the local connection metal.
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