Patent 12132012 was granted and assigned to ChangXin Memory Technologies on October, 2024 by the United States Patent and Trademark Office.
Embodiments of the present application provide a semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate; an integrated circuit region formed in the semiconductor substrate; and a seal ring arranged in the semiconductor substrate and around the integrated circuit region and configured to protect the integrated circuit region, wherein the seal ring has a wavy structure.