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US Patent 12136566 Semiconductor device and method of manufacture

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
October 19, 2022
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Date of Patent
November 5, 2024
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Patent Application Number
17969396
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Patent Citations
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9443769 Wrap-around contact
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548366 Self aligned contact scheme
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US Patent 9831183 Contact structure and method of forming
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9859386 Self aligned contact scheme
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US Patent 6998343 Method for creating barrier layers for copper diffusion
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•••
Patent Inventor Names
Po-Nan Yeh
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Kuo-Bin Huang
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Liang-Yin Chen
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Chia-Cheng Chen
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U-Ting Chiu
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Yu-Shih Wang
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Ming-Hsi Yeh
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Chun-Neng Lin
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12136566
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Patent Primary Examiner
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Shahed Ahmed
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CPC Code
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H01L 2221/101
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H01L 23/528
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H01L 21/76814
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H01L 21/76831
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H01L 23/5329
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H01L 23/5226
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H01L 21/76829
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H01L 21/76804
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H01L 21/76825
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