US Patent 12136642 Passivation scheme for image sensor substrate

The present disclosure relates to an integrated chip including a substrate. A photodetector is arranged within the substrate. A trench isolation structure extends into the substrate on opposite sides of the photodetector. The trench isolation structure separates the photodetector from neighboring photodetectors. A first passivation layer is between a sidewall of the substrate and a sidewall of the trench isolation structure. The first passivation layer includes hydrogenated amorphous silicon.