US Patent 12137622 Forming-free random-access memory (RRAM) devices
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US Patent 12137622 Forming-free random-access memory (RRAM) devices
Article
Patent abstract
A method for fabricating a forming-free resistive random-access memory (RRAM) device is provided. The method includes: fabricating an RRAM cell and annealing the RRAM cell. The RRAM cell includes: a bottom electrode, a switching oxide layer comprising at least one transition metal oxide; a top electrode, and an interface between the switching oxide layer and the top electrode. In some embodiments, the at least one transition metal oxide includes at least one of HfO
Infobox
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Mingche Wu0
Minxian Zhang0
Ning Ge0
Date of Patent
November 5, 2024
0Patent Application Number
178128660
Date Filed
July 15, 2022
0Patent Citations
Patent Primary Examiner
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