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US Patent 12137622 Forming-free random-access memory (RRAM) devices
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Patent
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Date Filed
July 15, 2022
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Date of Patent
November 5, 2024
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Patent Application Number
17812866
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Patent Citations
US Patent 9053781 Structure and method for a forming free resistive random access memory with multi-level cell
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US Patent 10535818 Resistance change memory device
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US Patent 8921853 Thin film transistor having oxide semiconductor layer
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US Patent 9178153 Memristor structure with a dopant source
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Patent Inventor Names
Mingche Wu
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Minxian Zhang
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Ning Ge
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
12137622
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Patent Primary Examiner
Allison Bernstein
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CPC Code
G11C 2213/79
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G11C 2213/82
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G11C 13/003
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G11C 2013/0083
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G11C 2213/15
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G11C 13/0069
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G11C 13/004
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G11C 13/0007
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