Is a
Patent attributes
Patent Applicant
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kamal Kishore Goundar0
Date of Patent
February 1, 2005
0Patent Application Number
106432000
Date Filed
August 18, 2003
0Patent Citations Received
Patent Primary Examiner
Patent abstract
To deposit silicon carbide into a substrate, there is introduced into a reaction zone a gas including source gas of silicon, carbon, oxygen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reaction zone to cause the deposition.
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