US Patent 6849561 Method of forming low-k films
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Patent abstract
To deposit silicon carbide into a substrate, there is introduced into a reaction zone a gas including source gas of silicon, carbon, oxygen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reaction zone to cause the deposition.
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Patent Inventor Names
Kamal Kishore Goundar0
Date of Patent
February 1, 2005
0Patent Application Number
106432000
Date Filed
August 18, 2003
0Patent Primary Examiner
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US Patent 6849561 Method of forming low-k films
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