Is a
Patent attributes
Patent Applicant
0
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Grant M. Kloster0
Hyun-Mog Park0
Date of Patent
March 1, 2005
0Patent Application Number
103019560
Date Filed
November 21, 2002
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a layer defining an exhaust vent. At an appropriate time, the underlying sacrificial material is decomposed and exhausted away through the exhaust vent. Residue from the exhausted sacrificial material accumulates at the vent location during exhaustion until the vent is substantially occluded. As a result, an air gap is created having desirable characteristics as a dielectric.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.