US Patent 6946698 MRAM device having low-k inter-metal dielectric
Patent 6946698 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2005 by the United States Patent and Trademark Office.
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Patent abstract
A magnetic random access memory (MRAM) device including a magnetic tunneling junction (MTJ) stack separated from one or more proximate conductive layers and/or one or more proximate MTJ stacks by a low-k dielectric material.
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Patent Inventor Names
Chun-Chien Lin0
Date of Patent
September 20, 2005
0Patent Application Number
108167300
Date Filed
April 2, 2004
0Patent Primary Examiner
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US Patent 6946698 MRAM device having low-k inter-metal dielectric
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