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US Patent 12004431 Structure and method for MRAM devices

Patent 12004431 was granted and assigned to Taiwan Semiconductor Manufacturing Company on June, 2024 by the United States Patent and Trademark Office.

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Patent abstract

A semiconductor device includes a bottom electrode; a magnetic tunneling junction (MTJ) element over the bottom electrode; a top electrode over the MTJ element; and a sidewall spacer abutting the MTJ element, wherein at least one of the bottom electrode, the top electrode, and the sidewall spacer includes a magnetic material.

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