Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Denny D. Tang0
Li-Shyue Lai0
Wen Chin Lin0
Date of Patent
January 30, 2007
0Patent Application Number
110304530
Date Filed
January 6, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A magnetic random access memory (MRAM) cell that includes an MRAM stack and a conductive line for carrying write current associated with the MRAM cell. The conductive line is oriented in a direction that is angularly offset from an easy axis of the MRAM stack by an acute angle, such as about 45 degrees.
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