Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chi-Jen Liu0
Ming-Liang Yen0
Shich-Chang Suen0
Ying-Liang Chuang0
Li-Chieh Wu0
Liang-Guang Chen0
Date of Patent
September 20, 2016
0Patent Application Number
141349140
Date Filed
December 19, 2013
0Patent Citations Received
Patent Primary Examiner
Patent abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor structure including a metal gate (MG) layer formed to fill in a trench between two adjacent interlayer dielectric (ILD) regions; performing a chemical mechanical polishing (CMP) process using a CMP system to planarize the MG layer and the ILD regions; and cleaning the planarized MG layer using a O3/DIW solution including ozone gas (O3) dissolved in deionized water (DIW). The MG layer is formed on the ILD regions.
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