Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takashi Sugino0
Hitoshi Sakamoto0
Noriaki Ueda0
Date of Patent
October 25, 2005
0Patent Application Number
104717960
Date Filed
March 28, 2002
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is reacted with a diborane gas 13 diluted with a hydrogen gas, thereby forming a boron nitride film 15 on a substrate 4. Thus, the boron nitride film 15 excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant κ can be formed speedily.
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