Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Maitreyee Mahajani0
S. Brad Herner0
Date of Patent
January 10, 2006
0Patent Application Number
108558040
Date Filed
May 26, 2004
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An improved method for fabricating a three dimensional monolithic memory with increased density. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming semiconductor elements preferably comprising two diode portions and an antifuse, then filling and planarizing; and continuing to form conductors and semiconductor elements in multiple stories of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.
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