Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Guy T. Blalock0
David S. Becker0
Fred L. Roe0
Date of Patent
May 23, 2006
0Patent Application Number
099230580
Date Filed
August 6, 2001
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A process for controlling the plasma etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by (1) maintaining various portions of the etch chamber at elevated temperatures, and/ox (2) using an etch chemistry having a fluorohydrocarbon gas containing at least as many hydrogen atoms as fluorine atoms, preferably CH2F2 or CH3F.
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