Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tal Margalith0
Umesh K. Mishra0
James Stephen Speck0
Michael D. Craven0
Shuji Nakamura0
Stacia Keller0
Steven P. Denbaars0
Date of Patent
August 15, 2006
0Patent Application Number
104136900
Date Filed
April 15, 2003
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
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