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US Patent 7091514 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

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Patent Citations Received
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US Patent 11949039 Optoelectronic semiconductor device with nanorod array
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Patent Inventor Names
James Stephen Speck0
Michael D. Craven0
Shuji Nakamura0
Stacia Keller0
Steven P. Denbaars0
Tal Margalith0
Umesh K. Mishra0
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Patent abstract

A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

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US Patent 07091514 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices US Patent 7091514 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

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Patent Number
070915140
Patent Number
70915140
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=070915140
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Is a
Patent
Patent
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
070915140
Date of Patent
August 15, 2006
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Patent Application Number
104136900
Date Filed
April 15, 2003
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=070915140
Patent Primary Examiner
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David Nelms
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 US Patent 07091514 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07091514
Date of patent
August 15, 2006
Patent application number
10413690
Date Filed
April 15, 2003
Patent primary examiner
‌
David Nelms

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