Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wu Hung Ko0
Chih Wei Wen0
Tung Yaw Kang0
Date of Patent
August 29, 2006
Patent Application Number
10652843
Date Filed
August 29, 2003
Patent Primary Examiner
Patent abstract
The present invention relates to a method for removing etching assist gas from a fabrication system used during defect repair of a photomask in the fabrication of an integrated circuit, including: (a) inspecting the photomask and detecting a defect, the defect in a defect region; and (b) repairing the defect, wherein an amount, effective for the purpose of styrene is added to the system. By the method of the present invention, the amount of gas remaining on the MOS film is reduced, resulting in less surface defects present on the photomask.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
