US Patent 7097948 Method for repair of photomasks

Overview Structured Data Issues Contributors Activity

All edits

Edits on 6 Sep, 2023

"Add patent inventor(s)"

Golden AI

edited on 6 Sep, 2023

Edits made to:

Infobox (+3 properties)

Infobox

Patent Inventor Names

Chih Wei Wen0

Tung Yaw Kang0

Wu Hung Ko0

Edits on 29 Aug, 2023

"Add patent abstract"

Golden AI

edited on 29 Aug, 2023

Edits made to:

Article (+561 characters)

Article

Patent abstract

The present invention relates to a method for removing etching assist gas from a fabrication system used during defect repair of a photomask in the fabrication of an integrated circuit, including: (a) inspecting the photomask and detecting a defect, the defect in a defect region; and (b) repairing the defect, wherein an amount, effective for the purpose of styrene is added to the system. By the method of the present invention, the amount of gas remaining on the MOS film is reduced, resulting in less surface defects present on the photomask.

Edits on 23 May, 2023

"Remove leading 0 from patent number"

Golden AI

edited on 23 May, 2023

Edits made to:

Infobox (+1/-1 properties)

‌