US Patent 7098094 NiSi metal gate stacks using a boron-trap
Patent 7098094 was granted and assigned to Texas Instruments on August, 2006 by the United States Patent and Trademark Office.
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Patent Inventor Names
Jiong-Ping Lu0
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Patent abstract
A capping layer (118) is used during an anneal to form fully silicided NiSi gate electrodes (120). The capping layer (118) comprises a material with an affinity for boron, such as TiN. The capping layer (118) serves as a boron trap that reduces the interface boron concentration for PMOS transistors without reducing the interface arsenic concentration for NMOS transistors.
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US Patent 07098094 NiSi metal gate stacks using a boron-trap US Patent 7098094 NiSi metal gate stacks using a boron-trap
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Patent Number
07098094
Patent Number
7098094
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US Patent 07098094 NiSi metal gate stacks using a boron-trap
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Is a
Current assignee
Patent jurisdiction
Patent number
07098094
Date of patent
August 29, 2006
Patent application number
10734768
Date Filed
December 12, 2003
Patent primary examiner
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