US Patent 7102229 Capacitor containing high purity tantalum
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Patent Inventor Names
Bahri Ozturk0
Guangxin Wang0
Harry Rosenberg0
Wesley LaRue0
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Patent abstract
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
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US Patent 07102229 Capacitor containing high purity tantalum US Patent 7102229 Capacitor containing high purity tantalum
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Patent Number
071022290
Patent Number
71022290
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Official Website
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Patent Jurisdiction
Patent Number
071022290
Date of Patent
September 5, 2006
0Patent Application Number
112027430
Date Filed
August 12, 2005
0Official Website
Patent Primary Examiner
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US Patent 07102229 Capacitor containing high purity tantalum
Infobox
Is a
Patent jurisdiction
Patent number
07102229
Date of patent
September 5, 2006
Patent application number
11202743
Date Filed
August 12, 2005
Patent primary examiner
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