Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 12, 2006
Patent Application Number
10907777
Date Filed
April 15, 2005
Patent Primary Examiner
Patent abstract
A semiconductor substrate is provided, and at least one first mask is formed above the semiconductor substrate. The first mask has a plurality of thicknesses and blocks at least one semi-insulating region. A second mask is thereafter formed on a surface of the semiconductor substrate. The second mask covers the semi-insulating region. The semi-insulating region is implanted with a high energy beam of particles by utilizing the second mask and the first mask as particle hindering masks. Finally, the second mask is removed.
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