US Patent 7105426 Method of forming a semi-insulating region
Patent 7105426 was granted and assigned to United Microelectronics Corporation on September, 2006 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor substrate is provided, and at least one first mask is formed above the semiconductor substrate. The first mask has a plurality of thicknesses and blocks at least one semi-insulating region. A second mask is thereafter formed on a surface of the semiconductor substrate. The second mask covers the semi-insulating region. The semi-insulating region is implanted with a high energy beam of particles by utilizing the second mask and the first mask as particle hindering masks. Finally, the second mask is removed.
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US Patent 07105426 Method of forming a semi-insulating region US Patent 7105426 Method of forming a semi-insulating region
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Patent Number
0710542600
Patent Number
710542600
Edits on 20 May, 2023
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Official Website
Edits on 23 Apr, 2023
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
071054260
Date of Patent
September 12, 2006
0Patent Application Number
109077770
Date Filed
April 15, 2005
0Official Website
Patent Primary Examiner
Edits on 24 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
071054260
Date of Patent
September 12, 2006
0Patent Application Number
109077770
Date Filed
April 15, 2005
0Official Website
Patent Primary Examiner
Edits on 7 Jun, 2022
Golden AI
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Edits on 17 Nov, 2021
Golden AI
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US Patent 07105426 Method of forming a semi-insulating region
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07105426
Date of patent
September 12, 2006
Patent application number
10907777
Date Filed
April 15, 2005
Patent primary examiner
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