US Patent 7106121 High frequency switch circuit

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Edits on 29 Aug, 2024

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edited on 29 Aug, 2024

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Patent Citations Received

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US Patent 12074217 Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction

Edits on 6 Sep, 2023

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edited on 6 Sep, 2023

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Patent Inventor Names

Katsushi Tara0

Kenichi Hidaka0

Tadayoshi Nakatsuka0

Edits on 31 Aug, 2023

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Golden AI

edited on 31 Aug, 2023

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Patent abstract

One end of each of five resistors is connected to each of the two ends and the respective intermediate points of a cascade of four depression-type FETs, while the other ends of the five resistors are provided with a predetermined voltage. This configuration fixes the source-drain potential of the four FETs. This fixing of the source-drain potential of the FETs permits stable application of a bias voltage for turning ON the FETs between the gate and the source each FET, so as to ensure the ON-OFF switching of the FETs.

Edits on 5 Jul, 2023

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edited on 5 Jul, 2023

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Patent Citations Received

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US Patent 11695407 Circuit and method for controlling charge injection in radio frequency switches

Edits on 23 May, 2023

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